inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK2401 description drain current i d = 15a@ t c =25 drain source voltage- : v dss = 200v(min) fast switching speed applications switching regulators dc-dc converter, motor control absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 200 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 15 a i d(puls) pulsed drain current 45 a p tot total dissipation@t c =25 75 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.67 /w r th j-a thermal resistance, junction to ambient 83.3 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK2401 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 10ma 200 v v gs (th ) gate threshold voltage v ds = 10v; i d =1ma 1.5 3.5 v v sd diode forward on-voltage i s =15a ;v gs = 0 2.0 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 10a 0.18 i gss gate-body leakage current v gs = 16v;v ds = 0 10 a i dss zero gate voltage drain current v ds = 200v; v gs = 0 100 a c iss input capacitance v ds =10v; v gs =0v; f t =1mhz 2000 pf c rss reverse transfer capacitance 200 c oss output capacitance 600 t r rise time v gs =10v; i d =10a; v dd =100v; r l =10 35 ns t on turn-on time 50 t f fall time 10 t off turn-off time 66 pdf pdffactory pro www.fineprint.cn
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